{"id":18199,"date":"2026-10-13T09:00:00","date_gmt":"2026-10-13T07:00:00","guid":{"rendered":"https:\/\/tps-elektronik.com\/?post_type=case_studies&#038;p=18199"},"modified":"2026-09-21T10:47:26","modified_gmt":"2026-09-21T08:47:26","slug":"how-to-achieve-accurate-i-v-curve-tracing-for-semiconductor-device-characterization-with-tps-precision-voltage-current-source","status":"publish","type":"case_studies","link":"https:\/\/tps-elektronik.com\/en\/case-studies\/how-to-achieve-accurate-i-v-curve-tracing-for-semiconductor-device-characterization-with-tps-precision-voltage-current-source\/","title":{"rendered":"How to Achieve Accurate I-V Curve Tracing for Semiconductor Device Characterization with TPS Precision Voltage Current Source?"},"content":{"rendered":"<article class=\"blog-post\" lang=\"en\"><header>\n<p>System integrators, test engineers, and procurement teams in semiconductor equipment manufacturing rarely fail because they lack an I-V measurement instrument. They lose time\u2014and budget\u2014when measurement noise, leakage currents. Or instrument drift corrupt device characterization data, forcing repeated test runs and delaying product qualification.<br \/>TPS Elektronik\u2019s precision voltage current source integration services built to eliminate that risk: shielded test fixture design, guarded low-current measurement architecture. And validated SMU configurations that deliver repeatable I-V curves from first silicon to production test.<\/p>\n<p><a class=\"cta-primary\" href=\"https:\/\/tps-elektronik.com\/en\/services\/ems\/pcb-assembly\/\">Discuss your precision measurement requirements with TPS \u2192<\/a><\/p>\n<\/header><nav class=\"toc\" aria-label=\"Table of contents\">\n<h2 id=\"toc\">Table of contents<\/h2>\n<ol>\n<li><a href=\"#customer-challenge\">The customer challenge: accurate device characterization for advanced semiconductor nodes<\/a><\/li>\n<li><a href=\"#iv-curve-tracing-fundamentals\">I-V curve tracing fundamentals: what precision voltage current source brings to the bench<\/a>\n<ol>\n<li><a href=\"#source-measure-unit\">Why a precision source measure unit outperforms separate instruments<\/a><\/li>\n<li><a href=\"#low-current-challenges\">Low-current measurement challenges and the guarding solution<\/a><\/li>\n<\/ol>\n<\/li>\n<li><a href=\"#tps-solution\">The TPS solution: integrated precision source measure unit deployment<\/a><\/li>\n<li><a href=\"#results\">Measured results and customer outcome<\/a><\/li>\n<li><a href=\"#faq\">FAQ<\/a><\/li>\n<\/ol>\n<\/nav>\n<section id=\"customer-challenge\">\n<h2>1. The customer challenge: accurate device characterization for advanced semiconductor nodes<\/h2>\n<p>A European semiconductor equipment manufacturer approached TPS Elektronik with a recurring problem: their existing test bench configuration produced I-V curves with sufficient resolution for standard silicon devices but failed to resolve sub-picoamp leakage currents in wide-bandgap semiconductor components\u2014specifically GaN and SiC power devices. The measurement noise floor of their current setup exceeded the gate leakage specification of the devices under test.<\/p>\n<p>The customer required a <strong>precision voltage current source<\/strong> capable of sourcing and measuring at fA-level resolution while maintaining voltage accuracy better than 0.02% across a \u00b1200 V range. Their existing <strong>semiconductor I-V measurement source<\/strong> was a combination of a programmable power supply and a separate electrometer. Which introduced ground-loop noise and required lengthy cable reconfiguration between test phases.<\/p>\n<p>For the procurement team, the challenge was equally clear: the existing setup consumed 40 minutes per device for complete I-V characterization. Which limiting throughput and increasing the cost per characterized die. A <strong>device characterization source<\/strong> that could reduce this time while improving measurement confidence was the commercial requirement.<\/p>\n<p><img decoding=\"async\" class=\"alignnone size-full wp-image-18358\" src=\"https:\/\/tps-elektronik.com\/wp-content\/uploads\/2026\/09\/Precision-Voltage-Current-Source-Semiconductor-I-V-Curve-Tracing-Setup-1-1.jpg\" alt=\"Precision Voltage Current Source Semiconductor I-V Curve Tracing Setup Pr\u00e4zisions-Spannungs- und Stromquelle f\u00fcr die Kennlinienaufnahme (I-V-Kurven) an Halbleitern\" width=\"1920\" height=\"1079\" \/><\/p>\n<\/section>\n<section id=\"iv-curve-tracing-fundamentals\">\n<h2>2. I-V curve tracing fundamentals: what precision voltage current source brings to the bench<\/h2>\n<p>I-V curve tracing is the foundational measurement for semiconductor device characterization. It reveals threshold voltage, transconductance, on-resistance, leakage current, and breakdown behavior\u2014parameters that determine whether a device meets its specification. The quality of the measurement depends almost entirely on the quality of the source and measurement instrument.<\/p>\n<h3 id=\"source-measure-unit\">2.1 Why a precision source measure unit outperforms separate instruments<\/h3>\n<p>A <strong>precision source measure unit<\/strong> (SMU) integrates voltage sourcing, current sourcing, voltage measurement, and current measurement in a single instrument with a unified control loop. This integration eliminates the timing skew and ground-loop noise that occur when separate instruments used.<\/p>\n<p>For <strong>transistor curve tracing source<\/strong> applications, the SMU\u2019s four-quadrant operation allows it to source or sink current while measuring voltage. Which essential for characterizing devices in both forward and reverse bias. The <strong>precision SMU semiconductor test<\/strong> configuration at TPS was specified with:<\/p>\n<ul>\n<li>Current resolution down to 10 fA for gate leakage measurements<\/li>\n<li>Voltage source accuracy of \u00b10.015% + 1 mV at 20 V range<\/li>\n<li>Four-quadrant operation for forward and reverse device characterization<\/li>\n<li>Built-in sweep and list mode for automated I-V curve generation<\/li>\n<li>Triaxial output connectors for guarded low-current measurement<\/li>\n<\/ul>\n<h3 id=\"low-current-challenges\">2.2 Low-current measurement challenges and the guarding solution<\/h3>\n<p><strong>Low current semiconductor test<\/strong> at the femtoamp level requires more than a sensitive ammeter. Leakage currents from cable insulation, test fixture contamination. And ambient electromagnetic interference can all exceed the device leakage current being measured. The guarding technique\u2014maintaining a conductive enclosure at the same potential as the sensitive signal path. Which reduces these leakage currents by orders of magnitude.<\/p>\n<p>TPS designed a guarded test fixture with triaxial connectors and a guard ring surrounding the device under test. This fixture, combined with the SMU\u2019s triaxial output architecture. Which reduced the measurement noise floor from approximately 50 pA to below 1 pA\u2014sufficient to resolve the gate leakage of the customer\u2019s GaN devices.<\/p>\n<p>For <strong>diode leakage test PSU<\/strong> applications, the same guarding principles apply. The SMU sources a reverse voltage across the diode and measures the resulting leakage current, with the guard circuit eliminating parallel leakage paths through the test board.<\/p>\n<p>TPS\u2019s experience with precision electronic assembly for test applications is documented in the <a href=\"https:\/\/tps-elektronik.com\/en\/precision-cnc-machining-high-accuracy\/\">precision CNC machining guide<\/a> and the <a href=\"https:\/\/tps-elektronik.com\/en\/ems-cnc-milling-precision-machining-prototype-to-production\/\">EMS CNC milling prototype-to-production resource<\/a>.<\/p>\n<p><a class=\"cta-primary\" href=\"https:\/\/tps-elektronik.com\/en\/services\/ems\/pcb-assembly\/\">Explore TPS precision assembly capabilities \u2192<\/a><\/p>\n<\/section>\n<section id=\"tps-solution\">\n<h2>3. The TPS solution: integrated precision source measure unit deployment<\/h2>\n<p>TPS Elektronik approached the customer\u2019s challenge as an integrated measurement system problem, not a component sourcing exercise. The solution combined precision SMU selection, custom test fixture design and fabrication, and validated measurement procedures.<\/p>\n<p>The deployment included:<\/p>\n<ul>\n<li><strong>SMU specification and validation<\/strong>: A <strong>precision source measure unit<\/strong> with 10 fA current resolution and four-quadrant operation was specified and validated against the customer\u2019s device characterization requirements. The instrument\u2019s sweep mode was configured for linear and logarithmic I-V curve generation.<\/li>\n<li><strong>Guarded test fixture design<\/strong>: TPS designed a custom test fixture with triaxial connectors, guard rings, and shielding enclosure. The fixture was fabricated using TPS\u2019s <a href=\"https:\/\/tps-elektronik.com\/en\/ems-cnc-milling-electronics-fast-rfq-dfm\/\">EMS CNC milling service<\/a>, integrating precision machining with electronic assembly.<\/li>\n<li><strong>Measurement procedure validation<\/strong>: TPS engineers developed and documented the I-V sweep procedures, including settling time optimization, compliance limit configuration, and remote sensing calibration.<\/li>\n<li><strong>Integration with existing test workflow<\/strong>: The SMU was integrated into the customer\u2019s existing semiconductor parameter analyzer software environment. With SCPI command set configuration for automated test sequencing.<\/li>\n<\/ul>\n<p><img decoding=\"async\" class=\"alignnone size-full wp-image-18353\" src=\"https:\/\/tps-elektronik.com\/wp-content\/uploads\/2026\/09\/Low-Current-Semiconductor-Test-Precision-SMU-Guarding-2-1.jpg\" alt=\"Low Current Semiconductor Test Precision SMU Guarding Pr\u00e4zisions-SMU mit Guarding f\u00fcr Halbleitertests bei niedrigen Str\u00f6men\" width=\"1920\" height=\"1079\" \/><\/p>\n<p>For <strong>wafer level characterization source<\/strong> applications, TPS specified a probe card interface compatible with the SMU\u2019s triaxial output. Which enabling direct measurement at the wafer level without cable reconfiguration. This reduced setup time per device from 40 minutes to under 12 minutes.<\/p>\n<p><a class=\"cta-primary\" href=\"https:\/\/tps-elektronik.com\/en\/services\/ems\/pcb-assembly\/\">Request a precision measurement integration consultation \u2192<\/a><\/p>\n<\/section>\n<section id=\"results\">\n<h2>4. Measured results and customer outcome<\/h2>\n<p>The integrated precision SMU and guarded fixture solution delivered measurable improvements across all three customer requirements:<\/p>\n<ul>\n<li><strong>Measurement noise floor<\/strong>: Reduced from approximately 50 pA to below 1 pA, enabling accurate gate leakage characterization of GaN and SiC devices.<\/li>\n<li><strong>Characterization time per device<\/strong>: Reduced from 40 minutes to under 12 minutes through integrated sweeping, automated data logging, and eliminated cable reconfiguration.<\/li>\n<li><strong>Measurement repeatability<\/strong>: Improved to better than 0.5% variation across repeated I-V sweeps on the same device. Which validated against the customer\u2019s reference measurements.<\/li>\n<\/ul>\n<p>The customer subsequently deployed the TPS-validated configuration across three additional test benches, standardizing their semiconductor characterization workflow on the same precision SMU platform.<\/p>\n<p><img decoding=\"async\" class=\"alignnone size-full wp-image-18348\" src=\"https:\/\/tps-elektronik.com\/wp-content\/uploads\/2026\/09\/Wafer-Level-Characterization-Source-Precision-SMU-3-1.jpg\" alt=\"Wafer Level Characterization Source Precision SMU Wafer Level Characterization Source Precision SMU\" width=\"1920\" height=\"1079\" \/><\/p>\n<p>This project reflects TPS\u2019s broader approach to precision electronic assembly and test system integration. The <a href=\"https:\/\/tps-elektronik.com\/en\/types-of-milling-machine\/\">types of milling machine guide<\/a> and <a href=\"https:\/\/tps-elektronik.com\/en\/top-cnc-milling-machine-options\/\">CNC milling machine options resource<\/a> detail the machining capabilities that support custom test fixture fabrication.<\/p>\n<\/section>\n<section id=\"faq\">\n<h2>5. FAQ<\/h2>\n<div>\n<h3>What is the minimum current resolution required for GaN and SiC device characterization?<\/h3>\n<div>\n<div>Gate leakage measurements on wide-bandgap devices typically require current resolution in the femtoamp (fA) range. A precision source measure unit with 10 fA resolution and guarded triaxial connections is recommended to resolve leakage currents without interference from cable or fixture leakage.<\/div>\n<\/div>\n<h3>Why does a precision source measure unit outperform a separate power supply and ammeter?<\/h3>\n<div>\n<div>An integrated SMU eliminates the timing skew and ground-loop noise that occur with separate instruments. It provides a unified control loop for sourcing and measuring, four-quadrant operation for forward and reverse bias characterization, and a single calibration reference for both voltage and current measurements.<\/div>\n<\/div>\n<h3>How does guarding reduce measurement noise in low-current semiconductor testing?<\/h3>\n<div>\n<div>Guarding maintains a conductive enclosure at the same potential as the sensitive signal path, eliminating leakage currents through cable insulation and test fixture materials. Combined with triaxial connectors and a shielded enclosure, guarding can reduce the measurement noise floor by two to three orders of magnitude.<\/div>\n<\/div>\n<h3>Can TPS provide both the precision SMU and the custom test fixture?<\/h3>\n<div>\n<div>Yes. TPS integrates precision source measure unit specification, custom guarded test fixture design, and electronic assembly through its <a href=\"https:\/\/tps-elektronik.com\/en\/services\/ems\/pcb-assembly\/\">PCB assembly and EMS services<\/a>. The <a href=\"https:\/\/tps-elektronik.com\/en\/ems-cnc-milling-precision-machining-prototype-to-production\/\">CNC milling capability<\/a> supports precision fixture fabrication with tight tolerances.<\/div>\n<\/div>\n<h3>What standards apply to semiconductor I-V characterization measurements?<\/h3>\n<div>\n<div>IEC 60747 series defines test methods for discrete semiconductor devices, including rectifier diodes and power devices. JEDEC JESD22 and JESD47 standards define stress-test-driven qualification methods. The measurement methodology for I-V curve tracing follows the instrument manufacturer\u2019s application notes and the device specification requirements.<\/div>\n<\/div>\n<\/div>\n<\/section>\n<footer style=\"background: #2d5797; padding: 30px; border-radius: 14px; margin-top: 40px;\">\n<p style=\"color: #ffffff; font-size: 16px; line-height: 1.6; margin: 0;\"><strong>Ready to improve your semiconductor characterization accuracy?<\/strong><br \/>Contact TPS Elektronik for precision source measure unit integration, guarded test fixture design, and validated I-V curve tracing workflows\u2014from prototype characterization to production test.<br \/><a style=\"color: #ffffff; font-weight: 600; text-decoration: underline;\" href=\"https:\/\/tps-elektronik.com\/en\/services\/ems\/pcb-assembly\/\">Request your precision measurement consultation \u2192<\/a><\/p>\n<\/footer><\/article>\n\n<style 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They lose time\u2014and budget\u2014when measurement noise, leakage currents. Or instrument drift corrupt device characterization data, forcing repeated test runs and delaying product qualification.TPS Elektronik\u2019s precision voltage current source integration services built to eliminate that risk:\u2026 <a href=\"https:\/\/tps-elektronik.com\/en\/case-studies\/how-to-achieve-accurate-i-v-curve-tracing-for-semiconductor-device-characterization-with-tps-precision-voltage-current-source\/\">Read More &raquo;<\/a><\/p>\n","protected":false},"author":9,"featured_media":18348,"template":"","class_list":["post-18199","case_studies","type-case_studies","status-publish","has-post-thumbnail","hentry"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v28.6 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>How to Achieve Accurate I-V Curve Tracing for Semiconductor Device Characterization with TPS Precision Voltage Current Source? - TPS<\/title>\n<meta name=\"description\" content=\"Precision voltage current source for semiconductor I-V curve tracing ensures accurate device characterization. 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